| PART |
Description |
Maker |
| 3DD101B |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)
|
Inchange Semiconductor ...
|
| 3DD102B |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= 150V(Min.)
|
Inchange Semiconductor ...
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| 2SA505 |
Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.)
|
Inchange Semiconductor ...
|
| 2SB502 |
Collector-Emitter Breakdown Voltage-: V(BR)CEO= -80V(Min)
|
Inchange Semiconductor ...
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| DT430 |
Collector-Emitter Breakdown Voltage
|
Inchange Semiconductor ...
|
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| KSB1151 KSB1151YS KSB1151YSTSSTU KSB1151YSTSTU KSB |
Low Collector-Emitter Saturation Voltage Large Collector Current
PNP Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| PS2533-1 PS2533-1-V PS2533-2 PS2533-2-V PS2533-4 P |
High Collector To Emitter Voltage Photocoupler(高集电极到发射极电压光电耦合
HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES
|
NEC Corp.
NEC[NEC]
|
